| US 7,494,837 B2 | ||
| Thin film forming apparatus | ||
| Shunpei Yamazaki, Tokyo (Japan); Kunitaka Yamamoto, Kanagawa (Japan); Masaaki Hiroki, Kanagawa (Japan); and Takeshi Fukunaga, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Aug. 18, 2006, as Appl. No. 11/506,311. | ||
| Application 11/506311 is a division of application No. 10/420383, filed on Apr. 22, 2003, granted, now 7,115,434. | ||
| Application 10/420383 is a division of application No. 09/685912, filed on Oct. 10, 2000, abandoned. | ||
| Claims priority of application No. 11-291685 (JP), filed on Oct. 13, 1999. | ||
| Prior Publication US 2006/0283384 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—35 [438/29; 438/32; 438/99; 438/151; 257/E51.001; 257/E33.001; 257/E27.01] | 12 Claims |
| 1. A method for manufacturing a semiconductor device, comprising:
forming a plurality of source signal lines extending in a first direction and a plurality of gate signal lines extending in
a second direction perpendicular to the first direction over a substrate;
forming banks over the plurality of source signal lines and the plurality of gate signal lines,
wherein the banks are extending in the first and second directions,
wherein at least first, second and third regions are separated by the bank, and
wherein each of the first, second and third regions includes at least two pixels;
continuously applying a first solution comprising a material emitting red light when a voltage being applied onto at least
two pixels in the first region;
continuously applying a second solution comprising a material emitting green light when a voltage being applied onto at least
two pixels in the second region; and
continuously applying a third solution comprising a material emitting blue light when a voltage being applied onto at least
two pixels in the third region.
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