| US 7,494,759 B2 | ||
| Positive resist compositions and process for the formation of resist patterns with the same | ||
| Hideo Hada, Kawasaki (Japan); Masaru Takeshita, Kawasaki (Japan); and Satoshi Yamada, Kawasaki (Japan) | ||
| Assigned to Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi (Japan) | ||
| Appl. No. 11/597,696 PCT Filed May 24, 2005, PCT No. PCT/JP2005/009450 § 371(c)(1), (2), (4) Date Nov. 27, 2006, PCT Pub. No. WO2005/116768, PCT Pub. Date Dec. 08, 2005. |
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| Claims priority of application No. 2004-161881 (JP), filed on May 31, 2004; application No. 2004-161882 (JP), filed on May 31, 2004; application No. 2005-133205 (JP), filed on Apr. 28, 2005; and application No. 2005-133206 (JP), filed on Apr. 28, 2005. | ||
| Prior Publication US 2007/0224538 A1, Sep. 27, 2007 | ||
| Int. Cl. G03F 7/00 (2006.01); G03F 7/004 (2006.01) | ||
| U.S. Cl. 430—270.1 [430/311; 430/330] | 17 Claims |
| 1. A positive resist composition, comprising:
a resin component (A) that exhibits increased alkali solubility under action of acid; and
an acid generator component (B) that generates acid on irradiation, wherein
said component (A) is a copolymer including a structural unit (a1) derived from a mono(α-lower alkyl)acrylate that contains
an acid-dissociable, dissolution-inhibiting group, a structural unit (b1) derived from a mono(α-lower alkyl)acrylate that
contains a lactone ring, and a structural unit (c1) derived from a poly(α-lower alkyl)acrylate represented by a general formula
(1) below:
 (wherein, R represents a lower alkyl group or a hydrogen atom, R11 and R12 each represent, independently, a lower alkyl group, n represents an integer from 1 to 5, and A represents a bivalent to hexavalent
organic group).
|