| US 7,494,749 B2 | ||
| Photolithography using interdependent binary masks | ||
| Jeffrey C. Haines, Austin, Tex. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Feb. 22, 2005, as Appl. No. 11/64,431. | ||
| Application 11/064431 is a continuation of application No. 09/497942, filed on Feb. 04, 2000, abandoned. | ||
| Prior Publication US 2005/0147898 A1, Jul. 07, 2005 | ||
| Int. Cl. G03F 9/00 (2006.01) | ||
| U.S. Cl. 430—5 [430/313; 430/323; 430/329; 430/330; 430/394] | 9 Claims |
| 1. A method of performing a photolithography operation in a semiconductor fabrication process, the method comprising:
aligning a first binary reticle including a first pattern with a portion of a layer of a wafer;
exposing the portion of the wafer to light through the first binary reticle;
aligning a second binary reticle with the portion of the layer of the wafer; the second reticle including a second pattern
for transfer at a focal plane different from that of the first pattern and that is interdependent with but does not overlap
the first pattern; and
exposing the portion of the wafer to light through the second binary reticle.
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