| US 7,494,693 B2 | ||
| Ceramic thin film coating material having slope constitution and process for the production thereof | ||
| Hiroyuki Yamaoka, Ube (Japan); Yoshikatsu Harada, Ube (Japan); Teruaki Fujii, Ube (Japan); and Shinichirou Otani, Ube (Japan) | ||
| Assigned to Ube Industries, Ltd., Yamaguchi-Ken (Japan) | ||
| Filed on Oct. 23, 2006, as Appl. No. 11/584,637. | ||
| Application 11/584637 is a division of application No. 10/522775, abandoned, previously published as PCT/JP03/09981, filed on Aug. 06, 2003. | ||
| Claims priority of application No. 2002-232685 (JP), filed on Aug. 09, 2002. | ||
| Prior Publication US 2007/0059560 A1, Mar. 15, 2007 | ||
| Int. Cl. B05D 3/02 (2006.01); B05D 3/04 (2006.01); B05D 1/36 (2006.01); B05D 7/00 (2006.01); C08K 3/22 (2006.01); C04B 35/00 (2006.01); B01J 21/00 (2006.01) | ||
| U.S. Cl. 427—376.3 [427/376.2; 427/377; 427/380; 427/397.7; 427/407.2; 427/419.1; 501/96.2; 501/97.1; 501/154; 502/236; 524/497] | 12 Claims |

| 1. A process for producing ceramic thin film coating material having a slope constitution, which comprises
a base material and
a ceramic thin film comprising a composite phase composed of a first phase mainly formed of a silicon ceramic component and
a second phase mainly formed of a ceramic component other than the silicon ceramic component of the first phase, in which
the amount of fine crystal particles of at least one ceramic component that constitutes the second phase slopingly increases
toward a surface layer,
the base material being coated with the ceramic thin film,
which process comprises
coating a base material with a) a modified organosilicon polymer having a structure obtained by modifying an organosilicon
polymer with an organometallic compound, b) a mixture of an organosilicon polymer with an organometallic compound, or c) a
mixture of said modified organosilicon polymer with an organometallic compound,
carrying out a predetermined heat treatment, and
calcining the resultant base material at a temperature in the range of from 1200 to 1,800° C. in an oxidizing atmosphere,
an inert atmosphere or a nitrogen-containing atmosphere.
|