| US 7,332,735 B2 | ||
| Phase change memory cell and method of formation | ||
| Kristy A. Campbell, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Aug. 02, 2005, as Appl. No. 11/194,623. | ||
| Prior Publication US 2007/0029537 A1, Feb. 08, 2007 | ||
| Int. Cl. H01L 29/26 (2006.01) | ||
| U.S. Cl. 257—5 [257/2; 257/E29.08; 365/163] | 39 Claims |
| 1. A memory element comprising:
a first electrode;
an insulating material over the first electrode;
a via within the insulating material;
a chalcogenide comprising phase change material over the first electrode and within the via, wherein the phase change material
has a thickness of less than or equal to about 100 Å at an edge of the via adjacent the first electrode;
a metal-chalcogenide material over the phase change material and within the via; and
a second electrode over the metal-chalcogenide layer.
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