| US 7,332,362 B2 | ||
| Method for inspecting semiconductor device | ||
| Shigemitsu Shiba, Tokyo (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Filed on Nov. 28, 2005, as Appl. No. 11/287,458. | ||
| Application 11/287458 is a division of application No. 10/879060, filed on Jun. 30, 2004, granted, now 7,015,051. | ||
| Claims priority of application No. 2003-274511 (JP), filed on Jul. 15, 2003. | ||
| Prior Publication US 2006/0079058 A1, Apr. 13, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/66 (2006.01); H01L 35/24 (2006.01) | ||
| U.S. Cl. 438—15 [257/40] | 3 Claims |
| 1. A method of inspecting a crystalline abnormal part of a semiconductor device chip wafer, said method comprising:
an irradiating step of irradiating a wafer in which semiconductor device chips are integrated with a quantum beam having a
wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due
to excitation while the quantum beam is scanned; and
a detection and display step of detecting the thermo-electromotive force generated in a crystalline abnormal part of the wafer
by the irradiation by a change in voltage or current which appears between a surface of and a backside of the wafer, and of
displaying the thermo-electromotive force.
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