| US 7,492,213 B2 | ||
| High-voltage generating circuit including charge transfer switching circuit for selectively controlling body bias voltage of charge transfer device | ||
| Jung-sik Kim, Suwon-si (Korea, Republic of); Soo-man Hwang, Hwaseong-si (Korea, Republic of); and Young-min Jang, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Feb. 23, 2007, as Appl. No. 11/709,768. | ||
| Claims priority of application No. 10-2006-0017883 (KR), filed on Feb. 23, 2006. | ||
| Prior Publication US 2007/0286007 A1, Dec. 13, 2007 | ||
| Int. Cl. G05F 1/10 (2006.01) | ||
| U.S. Cl. 327—536 [327/390] | 3 Claims |
| 1. An electric charge transfer switch circuit comprising:
a first inverter receiving a first control signal requesting charge transfer, and generating a second control signal;
a second inverter receiving the second control signal;
a capacitor, a first terminal of the capacitor is connected to an output of the second inverter;
a first transistor connected between a source of a supply voltage and a second terminal of the capacitor, a gate of the first
transistor receiving a precharge signal;
a second transistor connected between a first node and a second node, a gate of the second transistor being connected to the
other terminal of the capacitor;
a third transistor connected between the first node and a bulk voltage of the second transistor, a gate of the third transistor
receiving the first control signal; and
a fourth transistor connected between the bulk voltage of the second transistor and a source of a ground voltage, a gate of
the fourth transistor receiving the second control signal.
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