US 7,492,178 B2
Method and apparatus for testing a hall magnetic field sensor on a wafer
Reiner Bidenbach, Vörstetten (Germany); Jens Schubert, Gundelfingen (Germany); Stefan Kredler, Heuweiler (Germany); and Ralf Janke, Denzlingen (Germany)
Assigned to Micronas GmbH, Freiburg (Germany)
Filed on Jun. 19, 2006, as Appl. No. 11/455,912.
Claims priority of application No. 10 2005 028 461 (DE), filed on Jun. 17, 2005.
Prior Publication US 2006/0284612 A1, Dec. 21, 2006
Int. Cl. G01R 31/02 (2006.01)
U.S. Cl. 324—763 11 Claims
OG exemplary drawing
 
1. A method for testing a Hall magnetic field sensor on a wafer, comprising:
generating a current flow in a Hall plate of the Hall magnetic field sensor;
measuring at least one voltage value across first and second nodes of the Hall plate and providing a measured voltage signal indicative thereof; and
determining an electrical resistance based upon the measured voltage and the current, in the absence of an applied test magnetic field, where the step of determining comprises determining resistance of a signal pathway including the Hall plate and a matrix switch.