| US 7,492,090 B2 | ||
| Display device and method for manufacturing the same | ||
| Shunpei Yamazaki, Tokyo (Japan); Toru Takayama, Kanagawa (Japan); Naoya Sakamoto, Tochigi (Japan); Kengo Akimoto, Kanagawa (Japan); Keiji Sato, Kanagawa (Japan); and Tetsunori Maruyama, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Sep. 10, 2004, as Appl. No. 10/937,904. | ||
| Claims priority of application No. 2003-329201 (JP), filed on Sep. 19, 2003. | ||
| Prior Publication US 2005/0093432 A1, May 05, 2005 | ||
| Int. Cl. H01J 63/04 (2006.01); H01J 1/62 (2006.01); H05B 33/04 (2006.01) | ||
| U.S. Cl. 313—503 [313/504; 313/505; 313/506; 313/498; 428/690; 428/917] | 45 Claims |
| 1. A display device comprising:
a hole injection electrode that comprises a first transparent conductive layer and a second transparent conductive layer;
and
an electroluminescent layer that comprises a hole injection layer and a light emitting layer and is in contact with the hole
injection electrode,
wherein each of the first transparent conductive layer and the second transparent conductive layer of the hole injection electrode
contains indium tin oxide and silicon, and
wherein a silicon concentration in the first conductive layer adjacent to the electroluminescent layer is higher than a silicon
concentration of the second conductive layer.
|