| US 7,492,008 B2 | ||
| Control of buried oxide in SIMOX | ||
| Stephen Richard Fox, Hopewell Junction, N.Y. (US); Neena Garg, Fishkill, N.Y. (US); Kenneth John Giewont, Hopewell Junction, N.Y. (US); Junedong Lee, Hopewell Junction, N.Y. (US); Siegfried Lutz Maurer, Stormville, N.Y. (US); Dan Moy, Bethel, Conn. (US); Maurice Heathcote Norcott, San Jose, Calif. (US); and Devendra Kumar Sadana, Pleasantville, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jul. 22, 2004, as Appl. No. 10/896,812. | ||
| Application 10/896812 is a division of application No. 10/200822, filed on Jul. 22, 2002, granted, now 6,784,072. | ||
| Prior Publication US 2005/0003626 A1, Jan. 06, 2005 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 257—347 [257/353; 257/E27.112] | 10 Claims |
| 1. A substrate comprising:
a single crystal Si containing material portion having an upper surface; and
a buried amorphous layer inside said single crystal Si containing material portion and located beneath said upper surface
of said single crystal Si containing material portion such that a region of said single crystal Si containing material portion
is present above said buried amorphous layer, wherein said buried amorphous layer comprises silicon and at least one element
selected from carbon, flourine, aluminum, boron, phosphorus, titanium, chromium, and iron, wherein said buried amorphous layer
comprises a plurality of portions that are disjoined from one another.
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