| 1. A trenched metal oxide semiconductor field effect transistor (MOSFET) device comprising a trenched gate surrounded by a
source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate, wherein said
MOSFET cell further comprising:
a shielded gate trench (SGT) structure below and insulated from said trenched gate wherein said SGT structure comprising substantially
a round hole having a lateral width greater than said trench gate with a hole-to-trench interfacial landmark constituting
an abrupt bending point defining an upper side edge of said SGT structure and wherein said trenched gate comprising a trench
with straight vertical sidewalls filled with a gate material therein.
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