| US 7,491,991 B2 | ||
| Method for fabricating CMOS image sensor | ||
| In Gyun Jeon, Gunpo-si (Korea, Republic of) | ||
| Assigned to Dongbu Electronics Co., Ltd., Seoul (Korea, Republic of) | ||
| Filed on Jun. 07, 2006, as Appl. No. 11/448,426. | ||
| Claims priority of application No. 10-2005-0048480 (KR), filed on Jun. 07, 2005. | ||
| Prior Publication US 2006/0273363 A1, Dec. 07, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 257—292 [257/290; 257/291] | 20 Claims |
| 1. A method for fabricating a CMOS image sensor comprising:
forming a gate electrode with a gate insulating layer interposed on a transistor region of a semiconductor substrate having
an active region defined by a photodiode and the transistor region;
forming a first impurity region of a first conductive type at the transistor region at a first side of the gate electrode;
forming a second impurity region of the first conductive type at the photodiode region at a second side of the gate electrode;
forming sidewalls comprising a first insulating layer and a second insulating layer at the first side and the second side
of the gate electrode;
forming a third impurity region of the first conductive type at the first side of the gate electrode where the first impurity
region is formed; and
forming a fourth impurity region of a second conductive type by implanting impurity ions of a second conductive type into
the gate electrode, the photodiode region including the second impurity region, and the transistor region using the sidewalls
as a hard mask.
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