| US 7,491,987 B2 | ||
| Junction field effect thin film transistor | ||
| Stefanovich Genrikh, Yongin-si (Korea, Republic of); Choong-Rae Cho, Yongin-si (Korea, Republic of); and Eun-Hong Lee, Yongin-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Feb. 12, 2007, as Appl. No. 11/705,108. | ||
| Claims priority of application No. 10-2006-0058893 (KR), filed on Jun. 28, 2006. | ||
| Prior Publication US 2008/0001184 A1, Jan. 03, 2008 | ||
| Int. Cl. H01L 29/80 (2006.01) | ||
| U.S. Cl. 257—256 [257/134; 257/272; 257/256; 257/504; 257/E29.057; 257/E29.059] | 15 Claims |
| 1. A junction field effect thin film transistor (JFETFT), comprising:
a first gate electrode on a substrate;
a first conductive type first gate semiconductor pattern on the first gate electrode;
a second conductive type semiconductor channel layer on the substrate and the first conductive type first gate semiconductor
pattern; and
source and drain electrodes on the second conductive type semiconductor pattern, located at both sides of the first conductive
type gate semiconductor pattern,
wherein the first conductive type first gate semiconductor pattern is a transparent conductive oxide layer.
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