| US 7,491,979 B2 | ||
| Reflective electrode and compound semiconductor light emitting device including the same | ||
| Joon-seop Kwak, Gyeonggi-do (Korea, Republic of); Tae-yeon Seong, Gwangju-si (Korea, Republic of); and June-o Song, Gwangju-si (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do (Korea, Republic of); and Gwangju Institute of Science and Technology, Buk-Gu, Gwangju-Si (Korea, Republic of) | ||
| Filed on Dec. 18, 2007, as Appl. No. 12/870. | ||
| Application 12/000870 is a division of application No. 11/080509, filed on Mar. 16, 2005, abandoned. | ||
| Claims priority of application No. 10-2004-0069151 (KR), filed on Aug. 31, 2004. | ||
| Prior Publication US 2008/0105890 A1, May 08, 2008 | ||
| Int. Cl. H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—98 [257/79] | 26 Claims |
| 1. A reflective electrode of a compound semiconductor light emitting device, which is formed on a p-type compound semiconductor
layer, the electrode comprising:
a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer;
a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide;
a third electrode layer disposed on the second electrode layer and formed of an optical reflective material; and
a fourth electrode layer formed on the third electrode layer using a predetermined material to prevent agglomeration caused
by an annealing process from occurring on the surface of the third electrode layer.
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