| US 7,491,974 B2 | ||
| Light-emitting device | ||
| Youichi Nagai, Osaka (Japan); Koji Katayama, Itami (Japan); and Hiroyuki Kitabayashi, Itami (Japan) | ||
| Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan) | ||
| Filed on Feb. 28, 2006, as Appl. No. 11/365,642. | ||
| Claims priority of application No. 2005-172364 (JP), filed on Jun. 13, 2005. | ||
| Prior Publication US 2006/0278864 A1, Dec. 14, 2006 | ||
| Int. Cl. H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—79 [257/13; 257/E27.12; 438/22] | 15 Claims |
| 1. A light-emitting device comprising:
a nitride semiconductor substrate;
an n-type nitride semiconductor layer on a first main surface side of said nitride semiconductor substrate;
a p-type nitride semiconductor layer positioned further away from said nitride semiconductor substrate compared to said n-type
nitride semiconductor layer; and
a light-emitting layer positioned between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer,
wherein said p-type nitride semiconductor layer side is down-mounted and light is emitted from a second main surface, which
is a main surface opposite from said first main surface of said nitride semiconductor substrate;
said second main surface of said nitride semiconductor substrate includes a region formed with cavities and projections;
an electrode is formed on said second main surface of said nitride semiconductor substrate; and
a protective film is formed only on a side wall of said electrode, a portion of said second main surface adjacent to said
electrode and an outer perimeter portion of a top surface of said electrode to cover a side wall of said electrode,
wherein:
the side wall covered by the protective film is an outermost surface of said electrode in a planar direction parallel to the
first main surface of said nitride semiconductor substrate, and
the protective film comprises an insulator including at least one material selected from the group consisting of SiOx, SiOxN1-x, and SiNx.
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