US 7,491,972 B1
	Polysilicon semiconductor thin film substrate, method for producing the same, semiconductor device, and electronic device
Yoshinobu Kimura, Tokyo (Japan); Takahiro Kamo, Mobara (Japan); and Yoshiyuki Kaneko, Hachioji (Japan)
Assigned to Hitachi, Ltd., Tokyo (Japan)
Appl. No. 10/19,407 PCT Filed Jun. 23, 2000, PCT No. PCT/JP00/04141 § 371(c)(1), (2), (4) Date Mar. 25, 2002, PCT Pub. No. WO01/01464, PCT Pub. Date Jan. 04, 2001.
Claims priority of application No. 11/181559 (JP), filed on Jun. 28, 1999.
Int. Cl. H01L 21/00 (2006.01)

U.S. Cl. 257—64  [257/79; 257/72]

6 Claims

1. A semiconductor device comprising plural transistors formed in a polycrystalline semiconductor thin film, wherein the polycrystalline semiconductor thin film is formed by a plurality of laser irradiation steps, wherein the laser irradiation steps are carried out so that, after the last laser irradiation step, the number of crystal grains with the number of closest crystal grains of 6 is greatest among plural crystal grains that form the polycrystalline semiconductor thin film.