| US 7,491,968 B2 | ||
| Memory device using quantum dots | ||
| Yoon Sok Kang, Seongnam-si (Korea, Republic of); Sang Kyun Lee, Seongnam-si (Korea, Republic of); and Won Jae Joo, Hwaseong-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do (Korea, Republic of) | ||
| Filed on Sep. 21, 2005, as Appl. No. 11/230,530. | ||
| Claims priority of application No. 10-2004-0111925 (KR), filed on Dec. 24, 2004. | ||
| Prior Publication US 2007/0221986 A1, Sep. 27, 2007 | ||
| Int. Cl. H01L 51/00 (2006.01) | ||
| U.S. Cl. 257—40 [257/E51.003; 257/E51.029; 257/E51.03; 257/E51.034; 438/99; 438/381; 977/753; 977/783] | 29 Claims |
| 1. A memory device, comprising:
an upper electrode layer;
a lower electrode layer; and
a memory layer disposed between the upper electrode layer and the lower electrode layer,
wherein the memory layer comprises quantum dots dispersed in an organic material, and
wherein the quantum dots have a core-shell structure, and
wherein the core is conductive and the shell is conductive.
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