| US 7,491,967 B2 | ||
| Field effect transistor, method of producing the same, and method of producing laminated member | ||
| Daisuke Miura, Numazu (Japan); Tomonari Nakayama, Yokohama (Japan); Toshinobu Ohnishi, Yokohama (Japan); Makoto Kubota, Kawasaki (Japan); Akane Masumoto, Yokohama (Japan); Hidetoshi Tsuzuki, Kawasaki (Japan); and Makiko Miyachi, Kawasaki (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Appl. No. 10/555,614 PCT Filed Mar. 09, 2005, PCT No. PCT/JP2005/004586 § 371(c)(1), (2), (4) Date Nov. 04, 2005, PCT Pub. No. WO2005/086254, PCT Pub. Date Sep. 15, 2005. |
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| Claims priority of application No. 2004-067671 (JP), filed on Mar. 10, 2004. | ||
| Prior Publication US 2007/0012914 A1, Jan. 18, 2007 | ||
| Int. Cl. H01L 51/00 (2006.01); H01L 51/05 (2006.01) | ||
| U.S. Cl. 257—40 [257/642; 257/E51.007; 257/E51.005; 438/99] | 4 Claims |
| 1. A field effect transistor having an organic semiconductor layer, comprising:
an organic semiconductor layer containing at least porphyrin; and
a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to
be in intimate contact with the organic semiconductor layer,
wherein Bragg angles (2θ) of CuKα X-ray diffraction in the organic semiconductor layer have peaks at 8.3°±0.2°, 10.1°±0.2°,
11.8°±0.2°, and 14.4°±0.2°.
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