US 7,491,966 B2
Semiconductor substrate and process for producing it
Dirk Dantz, Sassenburg (Germany); Andreas Huber, Garching (Germany); Reinhold Wahlich, Tittmoning (Germany); and Brian Murphy, Pfarrkirchen (Germany)
Assigned to Siltronic AG, Munich (Germany)
Filed on Jun. 21, 2005, as Appl. No. 11/157,260.
Claims priority of application No. 10 2004 030 612 (DE), filed on Jun. 24, 2004.
Prior Publication US 2005/0287767 A1, Dec. 29, 2005
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01)
U.S. Cl. 257—19  [257/18; 257/E29.193] 8 Claims
OG exemplary drawing
 
1. A semiconductor substrate, comprising a carrier wafer and a joined layer comprising single-crystalline semiconductor material, wherein the joined layer has a thickness of 100 nm or less, has a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.