| US 7,491,964 B2 | ||
| Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process | ||
| Fred Buehrer, Poughquag, N.Y. (US); Anthony I. Chou, Beacon, N.Y. (US); Toshiharu Furukawa, Essex Junction, Vt. (US); and Renee T. Mo, Briarcliff Manor, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jan. 17, 2005, as Appl. No. 10/905,683. | ||
| Prior Publication US 2006/0160322 A1, Jul. 20, 2006 | ||
| Int. Cl. H01L 29/00 (2006.01) | ||
| U.S. Cl. 257—3 [257/349; 257/354; 257/374; 257/547; 257/E21.546] | 12 Claims |
| 1. A semiconductor trench isolation structure comprising:
a silicon substrate;
an isolation trench in said silicon substrate; and,
a single layer of silicon dioxide completely filling said isolation trench,
wherein said single layer comprises an oxynitride upper portion converted from the upper portion of the single layer of silicon
dioxide above an oxide lower portion and wherein said oxynitride upper portion extends both above and below a level of a top
surface of said silicon substrate.
|