| US 7,491,962 B2 | ||
| Resistance variable memory device with nanoparticle electrode and method of fabrication | ||
| Jun Liu, Boise, Id. (US); and Kristy A. Campbell, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Aug. 30, 2005, as Appl. No. 11/213,830. | ||
| Prior Publication US 2007/0045604 A1, Mar. 01, 2007 | ||
| Int. Cl. H01L 29/02 (2006.01) | ||
| U.S. Cl. 257—2 [257/1; 257/3; 257/4; 257/5; 257/613; 257/616; 257/E45.001; 257/E45.002; 257/E47.001; 365/148; 365/163] | 28 Claims |
| 1. A memory device, comprising:
a first electrode and a second electrode;
a chalcogenide glass layer between said first electrode and said second electrode; and
at least one nanoparticle positioned between said first electrode and said chalcogenide glass layer, wherein said chalcogenide
glass layer is in contact with both the at least one nanoparticle and the first electrode and said at least one nanoparticle
is separated from said second electrode by at least a portion of said chalcogenide glass layer.
|