| US 7,491,955 B2 | ||
| EUV light source, EUV exposure system, and production method for semiconductor device | ||
| Masayuki Shiraishi, Kumagaya (Japan) | ||
| Assigned to Nikon Corporation, Tokyo (Japan) | ||
| Appl. No. 11/629,498 PCT Filed Jun. 22, 2005, PCT No. PCT/JP2005/012007 § 371(c)(1), (2), (4) Date Dec. 14, 2006, PCT Pub. No. WO2006/006408, PCT Pub. Date Jan. 19, 2006. |
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| Claims priority of application No. 2004-186132 (JP), filed on Jun. 24, 2004. | ||
| Prior Publication US 2008/0043213 A1, Feb. 21, 2008 | ||
| Int. Cl. G01N 21/33 (2006.01); G01J 3/10 (2006.01); H05H 1/24 (2006.01) | ||
| U.S. Cl. 250—504R [250/365; 250/372; 315/111.21] | 13 Claims |
| 1. An EUV light source comprising:
a target substance, wherein the target substance is an Sn—Ga (tin-gallium) type alloy in which the atomic % of Sn is 15% or
less; and
an energy source for directing energy at the target substance so that the energy is applied to the target substance,
wherein energy applied to the target substance produces a plasma, and
wherein the plasma generates and emits EUV light.
|