| US 7,491,952 B2 | ||
| Method for controlling charge amount of ion beam and a wafer applied in the method | ||
| Jinquan Zhu, Shanghai (China) | ||
| Assigned to Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (China) | ||
| Filed on Dec. 29, 2006, as Appl. No. 11/618,704. | ||
| Claims priority of application No. 2006 1 0116847 (CN), filed on Sep. 30, 2006. | ||
| Prior Publication US 2008/0078959 A1, Apr. 03, 2008 | ||
| Int. Cl. H01J 37/317 (2006.01); H01J 37/04 (2006.01); H01J 37/08 (2006.01) | ||
| U.S. Cl. 250—492.21 [250/492.2; 250/492.3; 250/423 R; 250/424] | 10 Claims |
| 1. A method of controlling a charge amount of an ion beam, comprising:
providing a semiconductor wafer;
forming an insulation layer on a surface of the wafer, wherein the insulation layer has parts and a gap between the parts
of the insulation layer, wherein the insulation layer divides the surface of the wafer into an open region and a narrow and
long region;
implanting an ion beam into the wafer, wherein a specific amount of electrons is added into the ion beam;
emitting a plurality of light beams to the surface of the wafer along the open region and the narrow and long region and measuring
a plurality of light reflectivity values;
adjusting the amount of electrons to be added according to the variation in light reflectivity.
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