| US 7,491,951 B2 | ||
| Lithographic apparatus, system and device manufacturing method | ||
| Marc Hubertus Lorenz Van Der Velden, Eindhoven (Netherlands); Vadim Yevgenyevich Banine, Helmond (Netherlands); Bastiaan Matthias Mertens, 's-Gravenhage (Netherlands); Johannes Hubertus Josephina Moors, Helmond (Netherlands); Markus Weiss, Aalen (Germany); Bastiaan Theodoor Wolschrijn, Abcoude (Netherlands); and Michiel D. Nijkerk, Amsterdam (Netherlands) | ||
| Assigned to ASML Netherlands B.V., Veldhoven (Netherlands); and Carl Zeiss SMT AG, Oberkochen (Germany) | ||
| Filed on Dec. 28, 2005, as Appl. No. 11/319,193. | ||
| Prior Publication US 2007/0146660 A1, Jun. 28, 2007 | ||
| Int. Cl. G03B 27/52 (2006.01); G03F 7/20 (2006.01) | ||
| U.S. Cl. 250—492.2 | 47 Claims |
| 1. A lithographic apparatus comprising:
a system configured to condition a radiation beam comprising extreme ultraviolet or ultraviolet radiation received from a
radiation source or project a patterned radiation beam onto a target portion of a substrate, the system comprising:
an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and
a support structure configured to support the optically active device, the support structure comprising an element comprising
a material having a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce an
effect of ions, or comprising a material with a low yield of secondary electrons on ion impact to reduce the probability of
plasma breakdown; and
a gas supply configured to provide a background gas into the system, the radiation beam or patterned radiation beam interacting
with the background gas to form a plasma comprising a plurality of ions.
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