| US 7,491,945 B2 | ||
| Charged particle beam apparatus, charged particle beam control method, substrate inspection method and method of manufacturing semiconductor device | ||
| Osamu Nagano, Kanagawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jan. 21, 2005, as Appl. No. 11/38,161. | ||
| Claims priority of application No. 2004-013392 (JP), filed on Jan. 21, 2004. | ||
| Prior Publication US 2005/0199827 A1, Sep. 15, 2005 | ||
| Int. Cl. G01N 23/00 (2006.01) | ||
| U.S. Cl. 250—396R [250/492.2; 250/306; 250/307; 250/311; 250/396 ML] | 9 Claims |
| 7. A method of controlling a charged particle beam which is generated and applied to a substrate, the method comprising: generating a lens field to focus the charged particle beam on the substrate; and generating a deflection field which is superposed on the lens field with the use of a single stage deflector to control a position to irradiate the substrate by deflecting the charged particle beam, the deflector being formed so that surfaces thereof across the optical axis have an angle of inclination tapering in a direction of the optical axis from an image surface side to an object surface side and the deflection field being configured so that intensity thereof in a direction of the optical axis is changed in accordance with an angle with which the charged particle beam should fall onto the substrate. |