| US 7,491,925 B2 | ||
| Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method | ||
| Konrad Bach, Tieftal (Germany); Alexander Hoelke, Erfurt (Germany); Uwe Eckoldt, Hohenfelden (Germany); Wolfgang Einbrodt, Eisenach (Germany); and Karl-Ulrich Stahl, Erfurt (Germany) | ||
| Assigned to X-FAB Semiconductor Foundries, AG, Erfurt (Germany); and Melexis GmbH, Erfurt (Germany) | ||
| Appl. No. 10/596,035 PCT Filed Dec. 06, 2004, PCT No. PCT/DE2004/002672 § 371(c)(1), (2), (4) Date Mar. 20, 2007, PCT Pub. No. WO2005/057667, PCT Pub. Date Jun. 23, 2005. |
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| Claims priority of application No. 103 57 135 (DE), filed on Dec. 06, 2003. | ||
| Prior Publication US 2007/0164393 A1, Jul. 19, 2007 | ||
| Int. Cl. H03F 3/08 (2006.01) | ||
| U.S. Cl. 250—214A [250/214.1; 257/459; 257/466; 330/308] | 22 Claims |
| 1. A photodetector for processing low luminous intensities comprising a monolithically integrated transimpedance amplifier
and evaluation electronics, the photodetector having two opposite chip sides, and light (L) being incident from one of the
chip sides, the photodetector further comprising
a photocell portion (20) associated with one of the chip sides;
an electronic circuit portion (30) formed on the other of the chip sides, opposite said photocell portion (20);
electric connections between said photocell portion (20) and the electronic circuit portion (30), said electric connections extending in a direction parallel to an axis, said axis being orthogonal as a chip normal with
respect to a chip plane, said chip plane being parallel to each of the opposite chip sides;
wherein said electric connections between said photocell portion (20) and said electronic circuit portion (30) are formed by filled trenches doped in specified areas that are extending in a crystalline semiconductor.
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