| US 7,491,923 B2 | ||
| Solid state imaging device including a converging structure | ||
| Takeharu Tani, Kanagawa (Japan) | ||
| Assigned to Fujifilm Corporation, Tokyo (Japan) | ||
| Filed on Dec. 26, 2006, as Appl. No. 11/644,943. | ||
| Claims priority of application No. 2005-374888 (JP), filed on Dec. 27, 2005. | ||
| Prior Publication US 2007/0145241 A1, Jun. 28, 2007 | ||
| Int. Cl. H01L 27/00 (2006.01) | ||
| U.S. Cl. 250—208.1 [250/216; 257/432; 438/65] | 9 Claims |
| 1. A solid state imaging device comprising:
a semiconductor substrate on which light receiving elements and vertical transfer paths to transfer electric charges accumulated
in said light receiving elements are formed;
a light shielding layer covering said vertical transfer paths for protection from light and having openings formed at positions
corresponding to said light receiving elements;
a planarizing layer for covering said light shielding layer and said light receiving elements;
microlenses disposed above said planarizing layer and for focusing light toward said light receiving elements; and
a converging structure provided inside each of said openings, said converging structure having a higher refractive index than
said planarizing layer,
wherein said converging structure is made to satisfy an equation expressed as follows:
D=(λ/n2){¼+N/2}
wherein D is a thickness of a portion located in a central region of said converging structure, λ is a wavelength of light
entering said converging structure, and N is an integer.
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