| US 7,491,918 B2 | ||
| Electron beam detection device and electron tube | ||
| Hiroyuki Kyushima, Hamamatsu (Japan); Motohiro Suyama, Hamamtsu (Japan); Suenori Kimura, Hamamatsu (Japan); Yasuharu Negi, Hamamatsu (Japan); Yoshihiko Kawai, Hamamatsu (Japan); and Atsuhito Fukasawa, Hamamatsu (Japan) | ||
| Assigned to Hamamatsu Photonics K.K., Hamamatsu (Japan) | ||
| Appl. No. 10/571,322 PCT Filed Sep. 09, 2004, PCT No. PCT/JP2004/013132 § 371(c)(1), (2), (4) Date Mar. 09, 2006, PCT Pub. No. WO2005/027180, PCT Pub. Date Mar. 24, 2005. |
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| Claims priority of application No. 2003-318301 (JP), filed on Sep. 10, 2003. | ||
| Prior Publication US 2007/0023652 A1, Feb. 01, 2007 | ||
| Int. Cl. H01J 40/14 (2006.01); H01J 31/50 (2006.01) | ||
| U.S. Cl. 250—207 [250/214 VT] | 11 Claims |
| 1. An electron beam detection device comprising:
an insulating tube having one end and another end;
an electron-bombarded semiconductor device that is supported on the one end of the insulating tube and that outputs electrical
signals in response to incident electrons; and
a processing section that is provided in the insulating tube, that is connected to the semiconductor device, and that converts
the electrical signals into output signals,
electrons incident on the semiconductor device being detected on the another end side of the insulating tube by the output
signals that are obtained through conversion by the processing section.
|