| US 7,491,908 B2 | ||
| Plasma processing device and ashing method | ||
| Yoshinori Iino, Kanagawa (Japan) | ||
| Assigned to Shibaura Mechatronics Corporation, Yokohama-shi (Japan) | ||
| Appl. No. 10/567,665 PCT Filed Aug. 06, 2004, PCT No. PCT/JP2004/011657 § 371(c)(1), (2), (4) Date Aug. 31, 2006, PCT Pub. No. WO2005/015628, PCT Pub. Date Feb. 17, 2005. |
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| Claims priority of application No. 2003-207379 (JP), filed on Aug. 12, 2003. | ||
| Prior Publication US 2007/0151956 A1, Jul. 05, 2007 | ||
| Int. Cl. B23K 10/00 (2006.01) | ||
| U.S. Cl. 219—121.43 [219/121.4; 219/121.44; 118/723 MW; 204/298.38; 156/345.37] | 9 Claims |
| 1. A plasma processing device, comprising:
a chamber provided to maintain an atmosphere depressurized to less than atmospheric pressure;
a transfer pipe connected to the chamber;
a gas introduction mechanism provided to introduce a gas into the transfer pipe;
a microwave supply source provided to introduce a microwave from outside to inside of the transfer pipe; and
a light shield configured to block light emitted from the plasma and to allow passage of active species emitted from the plasma,
the light shield being provided substantially in contact with an inner wall of the chamber at a part where the active species
are introduced into the chamber, wherein
the plasma processing device is provided to form a plasma of the gas in the transfer pipe and to perform ashing processing
to remove a resist of a workpiece having a low-k material on which the resist is formed placed in the chamber,
the transfer pipe is connected to an opening in the inner wall of the chamber, the inner wall being generally perpendicular
to a major surface of the workpiece, and
the workpiece is not provided in a direct line of sight from the plasma.
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