| US 7,491,660 B2 | ||
| Method of forming nitride films with high compressive stress for improved PFET device performance | ||
| Richard A. Conti, Katohah, N.Y. (US); Ronald P. Bourque, Wappingers Falls, N.Y. (US); Nancy R. Klymko, Hopewell Junction, N.Y. (US); Anita Madan, Danbury, N.Y. (US); Michael C. Smits, Poughkeepsie, N.Y. (US); Roy H. Tilghman, Stormville, N.Y. (US); Kwong Hon Wong, Wappingers Falls, N.Y. (US); and Daewon Yang, Hopewell Junction, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US); and Novellus Systems. Inc., San Jose, Calif. (US) | ||
| Filed on Oct. 17, 2007, as Appl. No. 11/873,721. | ||
| Application 11/873721 is a division of application No. 11/160705, filed on Jul. 06, 2005. | ||
| Prior Publication US 2008/0045039 A1, Feb. 21, 2008 | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01); C23C 16/00 (2006.01); C23C 14/10 (2006.01); C23C 14/00 (2006.01) | ||
| U.S. Cl. 438—791 [438/792; 427/255.23; 427/255.26; 427/255.27] | 12 Claims |
| 1. A process for depositing a nitride layer on a workpiece, the process comprising:
providing a precursor gas mixture including silane and nitrogen in a plasma reactor;
supplying a main power to form a plasma inside the plasma reactor; and
applying a bias power to an electrode, inside the plasma reactor and on which the workpiece is disposed, thereby causing deposition
of the nitride layer on the workpiece, the bias power being a RF bias power having a frequency higher than that of the main
power, the nitride layer being deposited on the workpiece having a compressive stress with a magnitude greater than about
2.8 GPa.
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