| US 7,491,659 B2 | ||
| APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical | ||
| Shunpei Yamazaki, Tokyo (Japan); Mitsunori Sakama, Kanagawa (Japan); and Takeshi Fukada, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Dec. 18, 2003, as Appl. No. 10/737,855. | ||
| Application 10/737855 is a division of application No. 10/037865, filed on Oct. 24, 2001, granted, now 6,706,648. | ||
| Application 10/037865 is a continuation of application No. 08/706666, filed on Sep. 06, 1996, granted, now 6,323,142. | ||
| Claims priority of application No. 7-256969 (JP), filed on Sep. 08, 1995; and application No. 7-262519 (JP), filed on Sep. 16, 1995. | ||
| Prior Publication US 2004/0127069 A1, Jul. 01, 2004 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—790 [427/568] | 62 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
placing a substrate in a reaction chamber;
passing hydrogen through a heated catalyst to generate a hydrogen radical external to the reaction chamber;
forming an insulating film comprising oxide over said substrate; and
introducing said hydrogen radical into said reaction chamber during the formation of said insulating film.
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