US 7,491,650 B2
Etch compositions and methods of processing a substrate
Janos Fucsko, Boise, Id. (US); Grady S. Waldo, Boise, Id. (US); Joseph Wiggins, Boise, Id. (US); and Prashant Raghu, Boise, Id. (US)
Assigned to Micron Technology, Inc., Boise, Id. (US)
Filed on Jul. 27, 2005, as Appl. No. 11/191,685.
Prior Publication US 2007/0023396 A1, Feb. 01, 2007
Int. Cl. H01L 21/302 (2006.01)
U.S. Cl. 438—745  [216/83] 17 Claims
OG exemplary drawing
 
1. A method of processing a substrate comprising:
providing a substrate comprising a first material and a second material, the first material comprising at least one of polysilicon, monocrystalline silicon and amorphous silicon, and
the second material comprising a dielectric material; and exposing the substrate to an etch composition comprising from about 10% by volume to about 25% by volume isopropyl alcohol, NH4F, and tetramethyl ammonium fluoride (TMAF),
the exposing selectively removing the second material relative to the first material.