| US 7,491,623 B2 | ||
| Method of making a semiconductor structure | ||
| Xiaomeng Chen, Poughkeepsie, N.Y. (US); Shwu-Jen Jeng, Wappingers Falls, N.Y. (US); Byeong Y. Kim, Lagrageville, N.Y. (US); and Hasan M. Nayfeh, Poughkeepsie, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Aug. 20, 2007, as Appl. No. 11/841,018. | ||
| Application 11/841018 is a division of application No. 11/468403, filed on Aug. 30, 2006. | ||
| Prior Publication US 2008/0057673 A1, Mar. 06, 2008 | ||
| Int. Cl. H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—439 [257/E21.54] | 16 Claims |
| 1. A method for manufacturing a device, comprising:
forming a layer on a substrate;
forming a gate on the layer;
forming an undercut under the gate by removing portions of the layer;
forming a barrier layer within the undercut completely filling the undercut to protect the layer from corrosion during subsequent
processing steps; and
processing source and drain regions,
wherein the layer is an oxide layer, and
the barrier layer forms sidewalls abutting the gate which are of thickness of less than 10 nm.
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