| US 7,491,621 B2 | ||
| Method of forming isolation structures in a semiconductor manufacturing process | ||
| Chun Fu Chen, Taipei (Taiwan); Yung Tai Hung, Chiayi (Taiwan); Chi Tung Huang, Hsinchu (Taiwan); and Chen Wei Liao, Nantou (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., (Taiwan) | ||
| Filed on Jan. 30, 2006, as Appl. No. 11/342,784. | ||
| Prior Publication US 2007/0178662 A1, Aug. 02, 2007 | ||
| Int. Cl. H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—424 [438/435; 257/E21.546] | 17 Claims |
| 1. A method for forming a shallow trench isolation structure, comprising:
a) providing a substrate having an upper surface and having an opening extending down from the upper surface;
b) providing a first dielectric layer having an index of refraction that is higher than about 1.52 and directly in contact
with at least a portion of the upper surface of the substrate and filling the entire opening;
c) providing a second dielectric layer over the first dielectric layer; and
d) removing a portion of the first dielectric layer and substantially all of the second dielectric layer;
wherein the first dielectric layer has a different index of refraction than the second dielectric layer.
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