| US 7,491,601 B2 | ||
| Methods of forming electronic devices including electrodes with insulating spacers thereon | ||
| In-joon Yeo, Gyeonggi-Do (Korea, Republic of); Tae-hyuk Ahn, Gyeonggi-Do (Korea, Republic of); Kwang-wook Lee, Gyeonggi-Do (Korea, Republic of); Jung-woo Seo, Gyeonggi-Do (Korea, Republic of); and Jeong-sic Jeon, Gyeonggi-Do (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 14, 2007, as Appl. No. 11/956,360. | ||
| Application 11/397541 is a division of application No. 10/796931, filed on Mar. 10, 2004, granted, now 7,053,435. | ||
| Application 11/956360 is a continuation of application No. 11/397541, filed on Apr. 04, 2006, granted, now 7,314,795. | ||
| Claims priority of application No. 03-81099 (KR), filed on Nov. 17, 2003. | ||
| Prior Publication US 2008/0096347 A1, Apr. 24, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/8242 (2006.01); H01L 21/8243 (2006.01); H01L 21/8244 (2006.01) | ||
| U.S. Cl. 438—238 [438/239; 438/253; 438/398; 257/E21.019; 257/E21.013; 257/E21.649] | 22 Claims |
| 1. A method of forming an integrated circuit device, the method comprising:
forming a first conductive electrode on a substrate, the first conductive electrode having an electrode wall extending away
from the substrate;
forming an insulating spacer on the electrode wall wherein portions of the electrode wall are free of the insulating spacer
between the substrate and the insulating spacer and wherein portions of the electrode most distant from the substrate are
free of the insulating spacer;
forming a capacitor dielectric layer on portions of the first conductive electrode free of the spacer; and
forming a second conductive electrode on the capacitor dielectric layer opposite the first conductive electrode, wherein a
thickness of the insulating spacer between the first and second conductive electrodes is greater than a thickness of the capacitor
dielectric layer between the first and second conductive electrodes;
wherein the electrode wall includes a recessed portion and wherein the insulating spacer is on the recessed portion of the
electrode wall.
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