| US 7,491,590 B2 | ||
| Method for manufacturing thin film transistor in display device | ||
| Shinji Maekawa, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on May 25, 2005, as Appl. No. 11/137,746. | ||
| Claims priority of application No. 2004-159939 (JP), filed on May 28, 2004. | ||
| Prior Publication US 2005/0263765 A1, Dec. 01, 2005 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—158 [438/28; 438/149; 438/654] | 31 Claims |
| 1. A manufacturing method of a display device comprising:
forming a gate electrode on an insulating surface by discharging a first composition containing a conductive material, wherein
particles are dispersed in the first composition and a material of each of the particles is the same as at least one of substances
forming the insulating surface, each of the substances forming the insulating surface being compound;
forming an insulating layer over the gate electrode;
forming a semiconductor layer over the insulating layer, and
forming a source or drain electrode on the semiconductor layer by discharging a second composition containing a conductive
material,
wherein a material which is the same as a substance forming the semiconductor layer is dispersed in the second composition,
and
wherein at least one of the particles is in contact with the insulating surface; and
wherein the first composition is discharged by ink-jet method.
|