| US 7,491,561 B2 | ||
| Pixel sensor having doped isolation structure sidewall | ||
| James W. Adkisson, Jericho, Vt. (US); Mark D. Jaffe, Shelburne, Vt. (US); and Robert K. Leidy, Burlington, Vt. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Nov. 27, 2006, as Appl. No. 11/563,531. | ||
| Application 11/563531 is a division of application No. 10/908885, filed on May 31, 2005, granted, now 7,141,836. | ||
| Prior Publication US 2007/0087463 A1, Apr. 19, 2007 | ||
| Int. Cl. H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—30 [438/149; 438/151; 438/162; 438/166; 257/E27.131; 257/E27.133; 257/E27.152; 257/E31.038] | 26 Claims |
| 1. A method for forming a pixel sensor cell comprising the steps of:
a) providing a substrate of a first conductivity type;
b) forming a trench adjacent to a location of a photosensitive device having a surface pinning layer of said first conductivity
type, said trench defining an isolation structure having sidewalls; and
c) selectively forming a dopant material region of the first conductivity type along a first sidewall of said trench, said
first sidewall adapted for electrically coupling a formed pinning layer to the substrate.
|