| US 7,491,342 B2 | ||
| Bonded semiconductor substrate manufacturing method thereof | ||
| Eiji Kamiyama, Tokyo (Japan); Takeo Katoh, Tokyo (Japan); and Jea Gun Park, Seoul (Korea, Republic of) | ||
| Assigned to Sumco Corporation, Tokyo (Japan); and Industry-University Cooperation Foundation, Hanyang University, Seoul (Korea, Republic of) | ||
| Appl. No. 10/550,761 PCT Filed Apr. 02, 2004, PCT No. PCT/JP2004/004886 § 371(c)(1), (2), (4) Date Jan. 09, 2006, PCT Pub. No. WO2004/090986, PCT Pub. Date Oct. 21, 2004. |
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| Claims priority of application No. 2003-099541 (JP), filed on Apr. 02, 2003. | ||
| Prior Publication US 2006/0118935 A1, Jun. 08, 2006 | ||
| Int. Cl. B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01) | ||
| U.S. Cl. 216—36 [216/84; 438/458; 438/459; 438/690] | 6 Claims |
| 1. A manufacturing method of a bonded substrate having a final active layer thickness of 200 nm or less, comprising:
a) providing a first silicon wafer as an active layer wafer and a second silicon wafer as a support substrate;
b) forming silicon oxide film on a surface of said active layer wafer;
c) implanting hydrogen ions into the active layer wafer to form a hydrogen ion implanted layer under the silicon oxide film;
d) bonding the active layer wafer and the support substrate such that the silicon oxide film is interposed between the active
layer wafer and the support substrate and forms a bonded substrate having an embedded silicon oxide film;
e) heat treating the bonded substrate to form regions of high density hydrogen bubbles and cleaving away a portion of the
active layer wafer at said regions whereby the non-cleaved active layer wafer of the bonded substrate becomes the active layer
of the bonded substrate;
f) heat treating the cleaved bonded substrate to enhance bonding strength between the active layer wafer and the support substrate;
and
g) etching a surface of the active layer of the bonded substrate to control the thickness of said active layer, said etching
being carried out using a solution having an etching effect so as to etch in a range of 1nm to 1μm, said solution being a
solution having pH 9 or higher and containing alkaline chemicals and an oxidizer.
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