US 7,491,252 B2
	Tantalum barrier removal solution
Jinru Bian, Newark, Del. (US)
Assigned to Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, Del. (US)
Filed on Mar. 25, 2003, as Appl. No. 10/396,013.
Claims priority of provisional application 60/367402, filed on Mar. 25, 2002.
Prior Publication US 2003/0181345 A1, Sep. 25, 2003
This patent is subject to a terminal disclaimer.
Int. Cl. C09G 1/00 (2006.01); C09G 1/02 (2006.01); C09G 1/04 (2006.01); C11D 7/50 (2006.01)

U.S. Cl. 51—307  [51/308; 51/309; 106/3; 510/380; 510/397; 510/175; 510/367; 510/368]

9 Claims

1. A chemical mechanical planarization solution useful for removing a tantalum barrier material from a semiconductor wafer comprising by weight percent 0.02 to 15 inhibitor for a nonferrous metal, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 tantalum removal agent selected from the group consisting of formamidine, formamidine salts, formamidine derivatives, guanidine, guanidine derivatives, guanidine salts and mixtures thereof, 0 to 5 abrasive, 0 to 15 particles selected from the group consisting of polymeric particles and polymer-coated coated particles and balance water and the solution being oxidizer free, a pH greater than 5 to 12 and has a tantalum nitride to TEOS selectivity of at least 3 to 1 as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of less than 20.7 kPa.