| US 7,490,407 B2 | ||
| Method of patterning wall and phosphor well matrix utilizing glass | ||
| George B. Hopple, Palo Alto, Calif. (US); Roger W. Barton, Andover, Mass. (US); John D. Porter, Berkeley, Calif. (US); Theodore S. Fahlen, San Jose, Calif. (US); and Bob L. Mackey, San Jose, Calif. (US) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Filed on Dec. 27, 2004, as Appl. No. 11/23,995. | ||
| Application 11/023995 is a division of application No. 09/993740, filed on Nov. 21, 2001, granted, now 6,834,431. | ||
| Application 09/993740 is a continuation in part of application No. 09/970051, filed on Oct. 02, 2001, granted, now 6,742,257. | ||
| Prior Publication US 2005/0268465 A1, Dec. 08, 2005 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. B23P 17/00 (2006.01) | ||
| U.S. Cl. 29—897 [29/458; 29/469; 29/527.1; 29/830] | 2 Claims |
| 1. A method of fabricating a support structure comprising:
forming a layer of material into said support structure, said layer of material adapted to be attached onto a substrate surface;
blackening a surface of said layer of material, such that said blackened surface of said layer of material is interposed between
said layer of material and said substrate surface when said layer of material is attached onto said substrate surface;
treating said layer of material; and
etching said layer of material, such that said support structure is implementable during assembly of a display device, said
etching including sandblasting said layer of material with frozen particles of carbon dioxide, such that said substrate surface
is unaffected by said sandblasting when said layer of material is attached to said substrate surface prior to said etching,
when said layer of material is photochemically insensitive glass.
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