| US 7,489,716 B2 | ||
| Semiconductor laser device, method for manufacturing the same and optical pickup apparatus | ||
| Osamu Hamaoka, Higashihiroshima (Japan) | ||
| Assigned to Sharp Kabushiki Kaisha, Osaka (Japan) | ||
| Filed on Jan. 19, 2007, as Appl. No. 11/655,130. | ||
| Claims priority of application No. 2006-011694 (JP), filed on Jan. 19, 2006. | ||
| Prior Publication US 2007/0165684 A1, Jul. 19, 2007 | ||
| Int. Cl. H01S 3/04 (2006.01) | ||
| U.S. Cl. 372—34 [372/36; 372/87] | 11 Claims |
| 1. A semiconductor laser device comprising:
a semiconductor laser chip;
a plurality of electrode leads that are electrically conductive, said plurality of electrode leads including a chip mounting
electrode lead having an upper portion on which the semiconductor laser chip is mounted;
a base made of synthetic resin arranged to hold the electrode leads in an embedded state, the base being electrically insulating
and having a protruding portion through which the plurality of electrode leads are embedded, and a face formed at a basal
end of the protruding portion to face an emission direction of a laser beam emitted by the semiconductor laser chip; and
a cap made of the synthetic resin for the base, the cap having an opening formed so as to face an emission end face of the
semiconductor laser chip, and being integrally joined to the base on the face of the base to cover the protruding portion,
wherein one surface of the upper portion of the chip mounting electrode lead is exposed from the protruding portion, the one
surface including a heat release region broader than a region of the chip mounting electrode lead on which the semiconductor
laser chip is mounted.
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