| US 7,489,401 B2 | ||
| Device for detecting emission light of micro-object | ||
| Toshihiro Kamei, Tsukuba (Japan); and Taro Itatani, Tsukuba (Japan) | ||
| Assigned to National Institute of Advanced Industrial Science and Technology, Tokyo (Japan) | ||
| Filed on Feb. 28, 2005, as Appl. No. 11/66,261. | ||
| Claims priority of application No. 2004-056914 (JP), filed on Mar. 01, 2004. | ||
| Prior Publication US 2005/0237524 A1, Oct. 27, 2005 | ||
| Int. Cl. G01N 21/25 (2006.01) | ||
| U.S. Cl. 356—417 | 15 Claims |
| 1. A micro-object emission light detecting device for detecting with a semiconductor light detecting element emission light
emitted in the form of fluorescence or phosphorescence from a micro-object irradiated with excitation light emitted from an
excitation light source; wherein said semiconductor light detecting element and said excitation light source are disposed
coaxially or on one side, said micro-object emission light detecting device comprising:
a Q switch laser that generates a short pulse laser in response to the irradiation with the excitation light, elevates a peak
light intensity instantaneously, and irradiates the micro-object with a beam of short pulse laser as the excitation light;
and
a converging microlens that is inserted partway along a light path of the excitation light to converge the excitation light
and elevate a peak light intensity of the excitation light and that irradiates the micro-object with the excitation light
having the peak light intensity elevated;
whereby emission light is generated from the micro-object due to two-photon absorption and detected with the semiconductor
light detecting element
wherein said Q switch laser is a passive type comprising a gain medium and a saturable absorber, and
wherein the gain medium of said Q switch laser is a semiconductor with quantum well structure and the saturable absorber of
said Q switch laser is also a semiconductor with quantum well structure.
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