| US 7,489,200 B2 | ||
| Gain controllable low noise amplifier and wireless communication receiver having the same | ||
| Jae-Hong Chang, Seongnam-si (Korea, Republic of); Byeong-Ha Park, Seongnam-si (Korea, Republic of); Sang-Yeob Lee, Suwon-si (Korea, Republic of); Seung-Chan Heo, Yongin-si (Korea, Republic of); Han-Gun Chung, Seongnam-si (Korea, Republic of); Hyun-Won Mun, Yongin-si (Korea, Republic of); Min-Kyu Je, Anyang-si (Korea, Republic of); Seong-Han Ryu, Yongin-si (Korea, Republic of); and Kwang-Seok Han, Yongin-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si (Korea, Republic of) | ||
| Filed on Oct. 27, 2006, as Appl. No. 11/588,651. | ||
| Claims priority of application No. 10-2006-0005444 (KR), filed on Jan. 18, 2006. | ||
| Prior Publication US 2007/0164826 A1, Jul. 19, 2007 | ||
| Int. Cl. H03F 3/04 (2006.01) | ||
| U.S. Cl. 330—311 [330/278; 330/291] | 14 Claims |
| 1. A gain controllable wide-band low noise amplifier comprising:
a first transistor, coupled to an input node and an output node, amplifying an input signal to generate an output signal;
a second transistor allowing the output signal to feedback to the input node; and
a control circuit complementarily controlling transconductance of the first and second transistors,
wherein the control circuit comprises:
a main control portion having an output connected to the input node and controlling the amount of current flowing through
the first transistor in response to a digital control signal; and
a feedback control portion complementarily controlling the amount of current flowing through the second transistor with respect
to the amount of current flowing through the first transistor in response to an inverse of the digital control signal.
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