| US 7,488,933 B2 | ||
| Method for lithography model calibration | ||
| Jun Ye, Palo Alto, Calif. (US); Yu Cao, Cupertino, Calif. (US); Guangqing Chen, Fremont, Calif. (US); and Stefan Hunsche, Sunnyvale, Calif. (US) | ||
| Assigned to Brion Technologies, Inc., Santa Clara, Calif. (US) | ||
| Filed on Aug. 02, 2006, as Appl. No. 11/461,929. | ||
| Claims priority of provisional application 60/705667, filed on Aug. 05, 2005. | ||
| Prior Publication US 2007/0032896 A1, Feb. 08, 2007 | ||
| Int. Cl. G12B 13/00 (2006.01) | ||
| U.S. Cl. 250—252.1 [716/21] | 104 Claims |

| 1. A method for lithography model calibration, comprising:
selecting a model for a lithography process, the model including an optical model and a resist model, the optical model having
initial values of optical model parameters and the resist model having initial values of resist model parameters;
measuring an aerial image using an image sensor array to produce a measured sensor image, the aerial image being produced
by a lithography tool from a mask created using circuit design data;
simulating the lithography process using the optical model and the circuit design data to produce a simulated aerial image;
determining differences between the simulated aerial image and the measured sensor image; and
modifying the values of the optical model parameters based on the differences between the simulated aerial image and the measured
sensor image to identify optimal values for the optical model parameters, wherein a simulated aerial image produced using
the optimal values for the optical model parameters is an optimal simulated aerial image that is a best match for the measured
sensor image.
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