US 7,488,933 B2
Method for lithography model calibration
Jun Ye, Palo Alto, Calif. (US); Yu Cao, Cupertino, Calif. (US); Guangqing Chen, Fremont, Calif. (US); and Stefan Hunsche, Sunnyvale, Calif. (US)
Assigned to Brion Technologies, Inc., Santa Clara, Calif. (US)
Filed on Aug. 02, 2006, as Appl. No. 11/461,929.
Claims priority of provisional application 60/705667, filed on Aug. 05, 2005.
Prior Publication US 2007/0032896 A1, Feb. 08, 2007
Int. Cl. G12B 13/00 (2006.01)
U.S. Cl. 250—252.1  [716/21] 104 Claims
OG exemplary drawing
 
1. A method for lithography model calibration, comprising:
selecting a model for a lithography process, the model including an optical model and a resist model, the optical model having initial values of optical model parameters and the resist model having initial values of resist model parameters;
measuring an aerial image using an image sensor array to produce a measured sensor image, the aerial image being produced by a lithography tool from a mask created using circuit design data;
simulating the lithography process using the optical model and the circuit design data to produce a simulated aerial image;
determining differences between the simulated aerial image and the measured sensor image; and
modifying the values of the optical model parameters based on the differences between the simulated aerial image and the measured sensor image to identify optimal values for the optical model parameters, wherein a simulated aerial image produced using the optimal values for the optical model parameters is an optimal simulated aerial image that is a best match for the measured sensor image.