| US 7,488,665 B2 | ||
| Structurally-stabilized capacitors and method of making of same | ||
| Vishnu K. Agarwal, Boise, Id. (US); and Gurtej Sandhu, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Oct. 27, 2004, as Appl. No. 10/973,343. | ||
| Application 10/973343 is a division of application No. 10/665151, filed on Sep. 22, 2003, granted, now 7,282,756. | ||
| Application 10/665151 is a division of application No. 09/495719, filed on Feb. 01, 2000, granted, now 6,667,502. | ||
| Application 09/495719 is a continuation in part of application No. 09/386316, filed on Aug. 31, 1999, abandoned. | ||
| Prior Publication US 2005/0093052 A1, May 05, 2005 | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—387 [438/171; 438/190; 438/210; 438/329; 257/739; 257/E21.011; 257/E21.012] | 24 Claims |
| 1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a material layer over said substrate;
forming a plurality of microstructures over the substrate and adjacent said material layer;
forming a brace over said material layer, said brace transversely extending between lateral sides of at least two of the microstructures;
removing said material layer such that said brace remains suspended between said lateral sides of said at least two microstructures;
and
forming a capacitor over at least one of said at least two microstructures.
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