| US 7,488,656 B2 | ||
| Removal of charged defects from metal oxide-gate stacks | ||
| Eduard A. Cartier, New York, N.Y. (US); Matthew W. Copel, Yorktown Heights, N.Y. (US); Supratik Guha, Chappaqua, N.Y. (US); Richard A. Haight, Mahopac, N.Y. (US); Fenton R. McFeely, Ossining, N.Y. (US); and Vijay Narayanan, New York, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Apr. 29, 2005, as Appl. No. 11/119,310. | ||
| Prior Publication US 2006/0246740 A1, Nov. 02, 2006 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—287 [438/142; 438/197; 438/584; 438/585; 438/591; 438/758; 438/778; 438/785] | 10 Claims |
| 1. A method of re-oxidizing a high k gate dielectric of a material stack useful as a pFET to substantially remove charged
defects therefrom comprising:
exposing a material stack including a gate dielectric having a dielectric constant of about 4.0 or greater to dilute oxygen
at a temperature from about 250° C. to about 450° C. for a time period from about 1 minute to about 24 hours, said dilute
oxygen has a partial pressure of 100 Torr or less.
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