| US 7,488,617 B2 | ||
| CMOS image sensor and method for manufacturing the same | ||
| Chang Hun Han, Icheon-Si (Korea, Republic of) | ||
| Assigned to Dongbu Electronics Co., Ltd., Seoul (Korea, Republic of) | ||
| Filed on Apr. 10, 2007, as Appl. No. 11/786,169. | ||
| Application 11/786169 is a division of application No. 10/746980, filed on Dec. 23, 2003, granted, now 7,217,967. | ||
| Claims priority of application No. 10-2003-0065625 (KR), filed on Sep. 22, 2003. | ||
| Prior Publication US 2007/0194352 A1, Aug. 23, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—69 [257/233; 257/E27.133] | 10 Claims |
| 1. A method for manufacturing a CMOS image sensor, the method comprising the steps of:
forming an isolation layer on a semiconductor substrate so as to define an active region for a unit pixel;
forming at least one transistor gate structure on said semiconductor substrate;
forming a passivation layer over a boundary between said isolation layer and the active region; and
forming a diffusion region for a photodiode by implanting impurities into a portion of the active region, wherein said diffusion
region is located a distance away from said isolation region by an edge portion, wherein impurities are not implanted into
the edge portion, wherein the edge portion has a width of 50 μm or more, and wherein the passivation layer is not formed on
the diffusion region.
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