| US 7,488,386 B2 | ||
| Atomic layer deposition methods and chemical vapor deposition methods | ||
| Brian A. Vaartstra, Nampa, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jun. 13, 2006, as Appl. No. 11/452,817. | ||
| Application 11/452817 is a continuation of application No. 10/133947, filed on Apr. 25, 2002, granted, now 7,374,617, filed on May 20, 2008. | ||
| Prior Publication US 2006/0231017 A1, Oct. 19, 2006 | ||
| Int. Cl. C30B 23/00 (2006.01); C30B 28/14 (2006.01) | ||
| U.S. Cl. 117—84 [117/88; 117/89; 117/92; 117/93; 117/102; 117/105; 117/939] | 14 Claims |
| 1. An atomic layer deposition method comprising:
flowing a first non microwave-activated precursor into a reaction chamber and depositing at least a fragment of the first
non microwave-activated precursor onto a substrate to form a first layer; and
exposing the first layer to microwave radiation for a period of time of from about 0.1 second to about 60 seconds; and
after the exposing, flowing a second non microwave-activated precursor into the reaction chamber and depositing at least a
fragment of the second non microwave-activated precursor onto the first layer to form a second layer.
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