| US 7,486,320 B2 | ||
| Photoelectric conversion device and image pickup system using the photoelectric conversion device | ||
| Hiroki Hiyama, Zama (Japan); Akira Okita, Yamato (Japan); and Hideaki Takada, Atsugi (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Filed on Jan. 07, 2005, as Appl. No. 11/30,074. | ||
| Claims priority of application No. 2004-021542 (JP), filed on Jan. 29, 2004. | ||
| Prior Publication US 2005/0168605 A1, Aug. 04, 2005 | ||
| Int. Cl. H04N 3/14 (2006.01); H04N 5/335 (2006.01) | ||
| U.S. Cl. 348—300 [348/241; 348/308] | 2 Claims |
| 1. A photoelectric conversion device comprising:
a plurality of pixels each having a photoelectric conversion area which converts a light signal into an electrical signal;
a plurality of signal output lines through which electrical signals are generated at the photoelectric conversion areas, to
be read out from the plurality of pixels; and a plurality of amplification circuits provided in correspondence to the plurality
of signal output lines for amplifying the electrical signals, respectively, the plurality of amplification circuits including
at least one constant current circuit portion and being disposed in a predetermined direction, and
wherein the constant current circuit portion includes at least a field effect transistor, and a direction of a channel length
of the field effect transistor is different from the direction of disposition of the amplification circuits,
wherein the field effect transistor is a source grounded field effect transistor, and
wherein a channel length of the source grounded field effect transistor is longer than a pitch of repetition disposition of
the amplification circuits.
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