a current mirror including a first node, a second node, a third node and a control input, wherein the first node of the current mirror is coupled to a first power supply node associated with a first power supply;

a first cell including a diode-connected stack of insulated-gate field-effect transistors (IGFETs), wherein the first cell is coupled between the second node of the current mirror and a second power supply node associated with the first power supply and the diode-connected stack of IGFETs includes a first transistor that is biased in a triode weak inversion region;

a second cell including a diode-connected stack of IGFETs and a serially coupled resistor, wherein the second cell is coupled between the third node of the current mirror and the second power supply node and the second cell is configured to provide a reference voltage at a reference node; and

an amplifier including a first input, a second input and an output, wherein the first input of the amplifier is coupled to a first intermediate node of the first cell, the second input of the amplifier is coupled to a first intermediate node of the second cell and the output of the amplifier is coupled to the control input of the current mirror, and wherein the first and second cells are configured to conduct respective proportional to absolute temperature(PTAT) currents and the amplifier is configured to force the first intermediate nodes of the first and second cells to a substantially similar voltage.